Hall hole mobility in boron-doped homoepitaxial diamond-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Hall hole mobility in boron-doped homoepitaxial diamond

Published:2010-05-07 Issue:20 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Pernot J.,Volpe P. N.,Omnès F.,Muret P.,Mortet V.,Haenen K.,Teraji T.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.205203/fulltext

Reference41 articles.

1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

2. Charge transport in high mobility single crystal diamond

3. Hall electron mobility in diamond

4. Electron mobility in phosphorous doped {111} homoepitaxial diamond

5. Metal-insulator transition and superconductivity in boron-doped diamond

Cited by 137 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural design and electronic performance at MO /diamond (M = Hf, Zr, Ti, Al, Sc, Y) interfaces for MOS device applications;Applied Surface Science;2025-01

2. Diamond/SnO₂ Heterojunction p-n Diodes With Ion/off of 10⁸ and Breakdown Voltage Over 400 V;IEEE Electron Device Letters;2024-08

3. A Review of Diamond Materials and Applications in Power Semiconductor Devices;Materials;2024-07-11

4. Light B Doping by Ion Implantation into High‐Purity Heteroepitaxial Diamond;physica status solidi (a);2024-07-08

5. Compensation Ratio of Acceptor Centers in Different Growth Sectors of Boron-Doped High-Pressure High-Temperature Diamond;Technical Physics;2024-06-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3