Compensation Ratio of Acceptor Centers in Different Growth Sectors of Boron-Doped High-Pressure High-Temperature Diamond
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Published:2024-06-03
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ISSN:1063-7842
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Container-title:Technical Physics
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language:en
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Short-container-title:Tech. Phys.
Author:
Prikhodko D. D.ORCID, Timoshenko V. O.ORCID, Tarelkin S. A.ORCID, Kuznetsov M. S.ORCID, Luparev N. V.ORCID, Blank V. D.ORCID
Publisher
Pleiades Publishing Ltd
Reference21 articles.
1. H. Umezawa, Mater. Sci. Semicond. Proc. 78, 147 (2018). https://doi.org/10.1016/j.mssp.2018.01.007 2. D. Araujo, M. Suzuki, F. Lloret, G. Alba, and P. Villar, Materials 14, 7081 (2021). https://doi.org/10.3390/ma14227081 3. S. Shikata, Diamond Relat. Mater. 65, 168 (2016). https://doi.org/10.1016/j.diamond.2016.03.013 4. S. G. Buga, A. S. Galkin, M. S. Kuznetsov, N. V. Kornilov, N. V. Luparev, D. D. Prikhod’ko, S. A. Tarelkin, and V. D. Blank, Izv. Vyssh. Uchebn. Zaved., Khim. Khim. Tekhnol. 65 (11), 27 (2022). https://doi.org/10.6060/ivkkt.20226511.7y 5. T. Matsumoto, T. Mukose, T. Makino, D. Takeuchi, S. Yamasaki, T. Inokuma, and N. Tokuda, Diamond Relat. Mater. 75, 152 (2017). https://doi.org/10.1016/j.diamond.2017.03.018
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