Interpretation of infrared data in neutron-irradiated silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.11531/fulltext
Reference8 articles.
1. EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes
2. Characteristics of Neutron Damage in Silicon
3. New Oxygen Infrared Bands in Annealed Irradiated Silicon
4. Interstitial defects involving boron in irradiated silicon
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1. Studies of annealing of point defects and their influence on the electrical degradation and recovery behaviors of heavily neutron irradiated silicon;Radiation Effects and Defects in Solids;2018-10-15
2. Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon;Journal of Applied Physics;2017-09-07
3. Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon;Superlattices and Microstructures;2017-07
4. Quantitative Study of the Evolution of Oxygen and Vacancy Complexes in Czochralski Silicon;Applied Physics Express;2012-01-19
5. Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si;Physica B: Condensed Matter;2009-12
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