Studies of annealing of point defects and their influence on the electrical degradation and recovery behaviors of heavily neutron irradiated silicon-Reference-Cited by-同舟云学术

Studies of annealing of point defects and their influence on the electrical degradation and recovery behaviors of heavily neutron irradiated silicon

Published:2018-10-15 Issue:11-12 Volume:173 Page:1018-1026
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Dong Peng¹,Yang Ping¹,Xie Meng²

Affiliation:

1. Microsystem & Terahertz Research Center and Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, People's Republic of China

2. School of Materials Science and Engineering, Zhejiang University, Hangzhou, People's Republic of China

Funder

National Natural Science Foundation of China

Science Challenge Project

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2018.1531410

Reference37 articles.

1. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

2. Recent results from CERN RD50 collaboration

3. Oxygen defect processes in silicon and silicon germanium

4. Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon

5. Deep-level transient spectroscopy of low-energy ion-irradiated silicon

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