Deep-level transient spectroscopy of low-energy ion-irradiated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3054544
Reference10 articles.
1. Deep levels introduced during electron‐beam deposition of metals onn‐type silicon
2. Point defect injection into silicon due to low‐temperature surface modifications
3. Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma
4. Electrically active defects in silicon produced by ion channeling
5. Divacancy acceptor levels in ion-irradiated silicon
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Studies of annealing of point defects and their influence on the electrical degradation and recovery behaviors of heavily neutron irradiated silicon;Radiation Effects and Defects in Solids;2018-10-15
2. Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations;IEEE Transactions on Nuclear Science;2017-03
3. Research on the Combined Effects of Ionization and Displacement Defects in NPN Transistors Based on Deep Level Transient Spectroscopy;IEEE Transactions on Nuclear Science;2015-04
4. Evolution of Deep Level Centers in NPN Transistors Following 35 MeV Si Ion Irradiations With High Fluence;IEEE Transactions on Nuclear Science;2014-02
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