Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma-Reference-Cited by-同舟云学术

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Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma

Published:1999-01 Issue:1-4 Volume:148 Page:300-305
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Deenapanray P.N.K,Auret F.D,Myburg G

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Surface processes in low pressure plasmas

2. Dry Etching of GaAs , AlGaAs , and GaSb in Hydrochlorofluorocarbon Mixtures

3. Some Possibilities of using Defects for Applications in Semiconductors

4. Defect production and lifetime control in electron and γ‐irradiated silicon

5. Doping interface dipoles: Tunable heterojunction barrier heights and band‐edge discontinuities by molecular beam epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep-level transient spectroscopy of low-energy ion-irradiated silicon;Journal of Applied Physics;2009-01

2. Deep level transient spectroscopy of defects introduced in Si and SiGe by low energy particles;Journal of Physics: Condensed Matter;2003-09-19

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