Defect production and lifetime control in electron and γ‐irradiated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331460
Reference30 articles.
1. Electron irradiation induced recombination centers in silicon-minority carrier lifetime control
2. Lifetime control in silicon power devices by electron or gamma irradiation
3. The Dominant Recombination Centers in Electron‐Irradiated Semiconductors Devices
4. Spin Resonance in Electron Irradiated Silicon
5. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
Cited by 298 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects;physica status solidi (a);2024-07
2. Effect of proton irradiation induced localized defect clusters on recovery time and leakage current in silicon photoconductive semiconductor switches;AIP Advances;2023-10-01
3. DLTS Study of Defects in HgCdTe Heterostructure Photodiode;Journal of Electronic Materials;2023-08-30
4. The mechanism of the irradiation synergistic effect of silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first-principle calculations;The Journal of Chemical Physics;2023-07-21
5. TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3