Optical anisotropy in [0001]-orientedAlxGa1−xN/AlNquantum wells(x>0.69)
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.79.121308/fulltext
Reference19 articles.
1. Ultraviolet light-emitting diodes based on group three nitrides
2. 227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
3. Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers
4. Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
5. Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells
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