Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2358107
Reference23 articles.
1. Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys
2. Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells
3. High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
4. Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
5. 4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes
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2. Enhanced crystalline quality of non-polar a-plane AlGaN epitaxial film grown with Al-composition-graded AlGaN intermediate layer;Materials Research Express;2021-05-01
3. Growth of AlGaN-based multiple quantum wells on SiC substrates;Journal of Materials Science: Materials in Electronics;2018-02-24
4. Effects of a delta-layer insertion on the ultraviolet light emission characteristics of III-nitride quantum well structures;Superlattices and Microstructures;2017-12
5. Indium-surfactant-assisted epitaxial growth of semi-polar $$\left(11\overline{2}2\right)$$ 11 2 ¯ 2 plane Al0.42Ga0.58N films;Journal of Materials Science: Materials in Electronics;2017-06-24
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