Interstitial-carbon defects inSi1−xGex
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.233202/fulltext
Reference16 articles.
1. Electronic defect levels in relaxed, epitaxialp-type Si1−xGex layers produced by MeV proton irradiation
2. Carbon-related defects in proton-irradiated, n-type epitaxial Si1−xGex
3. Effects of strain on boron diffusion in Si and Si1−xGex
4. Mechanism of Boron Diffusion in Silicon: AnAb Initioand Kinetic Monte Carlo Study
5. Line, point and surface defect morphology of graded, relaxed GeSi alloys on Si substrates
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