Carbon-related defects in proton-irradiated, n-type epitaxial Si1−xGex-Reference-Cited by-同舟云学术

Carbon-related defects in proton-irradiated, n-type epitaxial Si1−xGex

Published:1999-12-27 Issue:26 Volume:75 Page:4085-4087
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Leervad Pedersen T. P.,Larsen A. Nylandsted,Mesli A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125544

Reference25 articles.

1. See, e.g. G. D. Watkins, in Defects and Diffusion in Silicon Processing, edited by T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty [Mater. Res. Soc. Symp. Proc. MRSPDH469, 139 (1997)].

2. Interstitial Defect Reactions in Silicon

3. EPR identification of the single-acceptor state of interstitial carbon in silicon

4. Bistable interstitial-carbon–substitutional-carbon pair in silicon

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