Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3658261
Reference66 articles.
1. Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
2. G. Davies and R. C. Newman, in Handbook in Semiconductors, edited by S. Mahajan, (Elsevier, Amsterdam, 1994), Vol. 3, pp. 1557–1635.
3. Defects in irradiated silicon: EPR of the tin-vacancy pair
4. Generation of divacancies in tin‐doped silicon
5. Tin as a Vacancy Trap in Silicon at Room Temperature
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