Electronic properties of sulfur-treated GaAs(001) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.7705/fulltext
Reference24 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Effects of passivating ionic films on the photoluminescence properties of GaAs
3. Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation
4. Near‐ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth
5. Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds
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1. New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics;Materials Research Express;2023-04-01
2. Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties;Journal of Applied Physics;2019-11-14
3. The effect of (NH4)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices;Journal of Physics: Condensed Matter;2013-07-17
4. Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation;Surface Science;2011-10
5. Structural and electronic properties of 0.5 ML sulfur adsorbed on the GaP(001) surface;Journal of Materials Science;2010-10-20
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