Indirect-to-direct gap transition in strained and unstrainedSnxGe1−xalloys
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.89.165201/fulltext
Reference35 articles.
1. Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium
2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
3. Interband Transitions inSnxGe1−xAlloys
4. Band structure and instability of Ge1−xSnx alloys
5. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
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