0.8-eV photoluminescence band inAlxGa1−xAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.10941/fulltext
Reference10 articles.
1. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
2. Optically detected magnetic resonance from the DX centre in silicon-doped AlxGa1-xAs
3. Luminescence of theDXcenter in AlGaAs
4. Deep‐level photoluminescence studies on Si‐doped, metalorganic chemical vapor deposition grown AlxGa1−xAs
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