Deep‐level photoluminescence studies on Si‐doped, metalorganic chemical vapor deposition grown AlxGa1−xAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348547
Reference31 articles.
1. Band Structure and Impurity States
2. A new model of deep donor centres in AlxGa1-xAs
3. The relationship of the D-X centre in AlxGa1-xAs and other III-V alloys with the conduction band structure
4. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
5. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
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