Role of hydrogen in hydrogen-induced layer exfoliation of germanium-Reference-Cited by-同舟云学术

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Role of hydrogen in hydrogen-induced layer exfoliation of germanium

Published:2007-01-09 Issue:3 Volume:75 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Zahler J. M.,Fontcuberta i Morral A.,Griggs M. J.,Atwater Harry A.,Chabal Y. J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.75.035309/fulltext

Reference22 articles.

1. Silicon on insulator material technology

2. SEMICONDUCTOR WAFER BONDING

3. Ge layer transfer to Si for photovoltaic applications

4. InGaAs/InP double heterostructures on InP/Si templates fabricated by wafer bonding and hydrogen-induced exfoliation

5. GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding

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3. Low-loss Ge waveguide at the 2-µm band on an n-type Ge-on-insulator wafer;Optical Materials Express;2021-11-30

4. Hall Study of Conductive Channels Formed in Germanium by Beams of High-Energy Light Ions;Ukrainian Journal of Physics;2021-01-29

5. Observation of Large Surface Area Exfoliation in Hydrogen Implanted Ge;physica status solidi (a);2020-07-08

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