Observation of Large Surface Area Exfoliation in Hydrogen Implanted Ge-Reference-Cited by-同舟云学术

Observation of Large Surface Area Exfoliation in Hydrogen Implanted Ge

Published:2020-07-08 Issue:16 Volume:217 Page:2000182
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Pathak Ravi¹^ORCID,Dadwal Uday²,Kapoor Ashok K.³,Singh Rajendra¹²

Affiliation:

1. Department of PhysicsIndian Institute of Technology Delhi Hauz Khas New Delhi 110016 India

2. Nanoscale Research Facility (NRF)Indian Institute of Technology Delhi Hauz Khas New Delhi 110016 India

3. Solid State Physics Laboratory Lucknow Road, Timarpur Delhi 110054 India

Funder

Board of Research in Nuclear Sciences

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000182

Reference38 articles.

1. Silicon on insulator material technology

2. Basic mechanisms involved in the Smart-Cut® process

3. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates

4. Wafer Direct Bonding: From Advanced Substrate Engineering to Future Applications in Micro/Nanoelectronics

5. Study of extended-defect formation in Ge and Si after H ion implantation

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