Nitrogen-induced levels inGaAs1−xNxstudied with resonant Raman scattering
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.13687/fulltext
Reference15 articles.
1. Electronic structure and phase stability ofGaAs1−xNxalloys
2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
3. Band Anticrossing in GaInNAs Alloys
4. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
5. Band structure ofInxGa1−xAs1−yNyalloys and effects of pressure
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