Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.7029/fulltext
Reference32 articles.
1. Carrier decay in GaAs quantum wells
2. Radiative lifetimes, quasi-Fermi-levels, and carrier densities in GaAs-(Ga,Al)As quantum-well photoluminescence under steady-state excitation conditions
3. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors
4. Evidence for excitonic decay of excess charge carriers in high quality GaAs quantum wells at room temperature
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