Carrier decay in GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102805
Reference14 articles.
1. Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures
2. 3‐pJ, 82‐MHz optical logic gates in a room‐temperature GaAs‐AlGaAs multiple‐quantum‐well étalon
3. Evidence for excitonic decay of excess charge carriers in high quality GaAs quantum wells at room temperature
4. Localization induced electron‐hole transition rate enhancement in GaAs quantum wells
5. Excitonic and electron‐hole contributions to the spontaneous recombination rate of injected charge carriers in GaAs‐GaAlAs multiple quantum well lasers at room temperature
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