Radiative lifetimes, quasi-Fermi-levels, and carrier densities in GaAs-(Ga,Al)As quantum-well photoluminescence under steady-state excitation conditions-Reference-Cited by-同舟云学术

Radiative lifetimes, quasi-Fermi-levels, and carrier densities in GaAs-(Ga,Al)As quantum-well photoluminescence under steady-state excitation conditions

Published:1993-11-15 Issue:20 Volume:48 Page:15092-15102
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Oliveira Luiz E.,de Dios-Leyva M.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.48.15092/fulltext

Reference31 articles.

1. Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices

2. Semiconductor laser theory with many-body effects

3. Many-particle effects and nonlinear optical properties of GaAs/(Al,Ga)As multiple-quantum-well structures under quasistationary excitation conditions

4. Temperature dependence of the radiative and nonradiative recombination time in GaAs/AlxGa1−xAs quantum-well structures

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