Chain character of vacancy-type defects in silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.41.8630/fulltext
Reference20 articles.
1. Wavefunctions of the divacancy in silicon
2. Vacancy in silicon: Hyperfine interactions from electron-nuclear double resonance measurements
3. The negatively charged vacancy in silicon: Hyperfine interactions from endor measurements
4. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter
5. The Electronic Structure of the Oxygen-Vacancy Complex in Silicon
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1. EPR studies of the isolated negatively charged silicon vacancies inn-type4H- and6H-SiC: Identification ofC3vsymmetry and silicon sites;Physical Review B;2003-10-23
2. Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC;Physical Review B;2002-12-05
3. Divacancy-tin complexes in electron-irradiated silicon studied by EPR;Physical Review B;2000-01-15
4. Covalency, elasticity and electron correlation in Si vacancies;Applied Surface Science;1995-01
5. Resonant Bonds in Symmetry-Lowering Distortion around a Si Divacancy;Physical Review Letters;1994-08-08
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