Vacancy in silicon: Hyperfine interactions from electron-nuclear double resonance measurements-Reference-Cited by-同舟云学术

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Vacancy in silicon: Hyperfine interactions from electron-nuclear double resonance measurements

Published:1987-02-01 Issue:4 Volume:35 Page:1566-1581
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sprenger M.,Muller S. H.,Sieverts E. G.,Ammerlaan C. A. J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.35.1566/fulltext

Reference34 articles.

1. Negative-U Properties for Point Defects in Silicon

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1. First-principles study of radiation defects in silicon;Computational Materials Science;2022-05

2. Carbon vacancy-related centers in 3C -silicon carbide: Negative- U properties and structural transformation;Physical Review B;2020-05-11

3. Retrospectives: Magnetic Resonance Studies of Intrinsic Defects in Semiconductors;Magnetic Resonance of Semiconductors and Their Nanostructures;2017

4. Supercell-size convergence of formation energies and gap levels of vacancy complexes in crystalline silicon in density functional theory calculations;Physical Review B;2015-10-12

5. Formation and migration energies of the vacancy in Si calculated using the HSE06 range-separated hybrid functional;Physical Review B;2013-11-25

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