Formation and migration energies of the vacancy in Si calculated using the HSE06 range-separated hybrid functional
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.88.195204/fulltext
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1. Intrinsic defects in silicon
2. Monovacancy Formation Enthalpy in Silicon
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4. Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon
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