Formation of Thermal Vacancies in Highly As and P Doped Si
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.93.255502/fulltext
Reference26 articles.
1. Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions
2. Silicon Self-Diffusion in Isotope Heterostructures
3. Radiation Enhanced Silicon Self-Diffusion and the Silicon Vacancy at High Temperatures
4. Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects
5. Improving the convergence of defect calculations in supercells: Anab initiostudy of the neutral silicon vacancy
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