Carbon vacancy-related centers in 3C -silicon carbide: Negative- U properties and structural transformation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.184108/fulltext
Reference46 articles.
1. Silicon vacancy related defect in 4H and 6H SiC
2. Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC
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4. Positively charged carbon vacancy in three inequivalent lattice sites of6H−SiC: Combined EPR and density functional theory study
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