Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.66.235202/fulltext
Reference33 articles.
1. Colour centres in irradiated diamonds. I
2. EPR identification of the negatively charged vacancy in diamond
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4. Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption
5. Radiation induced defects in CVD-grown 3C-SiC
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