The negatively charged vacancy in silicon: Hyperfine interactions from endor measurements-Reference-Cited by-同舟云学术

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The negatively charged vacancy in silicon: Hyperfine interactions from endor measurements

Published:1983-02 Issue:1-3 Volume:116 Page:224-229
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Sprenger M.,Muller S.H.,Ammerlaan C.A.J.

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. Radiation Damage in Semiconductors;Watkins,1965

2. Negative-U Properties for Point Defects in Silicon

3. Newton, J.L., Chatterjee, A.P., Harris, R.D. and Watkins G.D., this volume.

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. System-size convergence of point defect properties: The case of the silicon vacancy;Physical Review B;2011-07-29

2. Understanding the Jahn–Teller distortions for the divacancy and the vacancy–group-V-atom pair in silicon;Physica B: Condensed Matter;2006-04

3. Improving the convergence of defect calculations in supercells: Anab initiostudy of the neutral silicon vacancy;Physical Review B;2003-02-13

4. Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon;Physical Review B;1998-07-15

5. Covalency, elasticity and electron correlation in Si vacancies;Applied Surface Science;1995-01

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