Understanding the Jahn–Teller distortions for the divacancy and the vacancy–group-V-atom pair in silicon
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
2. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter
3. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs
4. Optical properties of group-V atom-vacancy pairs in silicon
5. Resonant Bonds in Symmetry-Lowering Distortion around a Si Divacancy
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3. Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation;Advances in Semiconductor Nanostructures;2017
4. Ab initioEPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion;Physical Review B;2012-05-04
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