Optical properties of group-V atom-vacancy pairs in silicon-Reference-Cited by-同舟云学术

Optical properties of group-V atom-vacancy pairs in silicon

Published:1989-12 Issue:1-2 Volume:111-112 Page:487-500
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Watkins G. D.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420158908213023

Reference9 articles.

1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter

2. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy Pairs

3. Watkins, G. D. 1968.Radiation Effects in Semiconductors, Edited by: Vook, F. L. 67N.Y.: Plenum Press.

4. Spin Resonance in Electron Irradiated Silicon

5. Kimerling, L. C. 1977.Radiation Effects in Semiconductors 1976, Inst. of Physics Conf. Se. No. 31 Edited by: Urli, N. B. and Corbett, J. W. 221London

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