1. J. Bourgoin, M. Lannoo, Point Defects in Semiconductors II Experimental Aspects (Springer, Berlin, 1983)
2. G. Davies, The optical properties of luminescent centres in silicon. Rep. Prog. Phys. 176, 83–188 (1989)
3. D.F. Daly, H.E. Noffke, An EPR study of fast neutron radiation damage in silicon, in Radiation Effects in Semiconductors, ed. by J.W. Corbett, G.D. Watkins (Gordon and Breach, London, 1971), pp. 179–187
4. F. Carton-Merlet, B. Pajot, D.T. Don, C. Porte, B. Clerjaud, P.M. Mooney, Photo-induced changes in the charge state of the divacancy in neutron and electron irradiated silicon. J. Phys. C 15, 2239–2255 (1982)
5. B.N. Mukashev, Kh.A. Abdullin, Yu.V. Gorelkinskii, S.Zh. Tokmoldin, Self-interstitial related reactions in silicon irradiated with light ions. Mater. Sci. Eng. B 58, 171–178 (1999)