Hydrostatic pressure coefficients of the photoluminescence ofInxGa1−xAs/GaAs strained-layer quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.3113/fulltext
Reference20 articles.
1. Photoluminescence study of undoped and modulation-doped pseudomorphicAlyGa1−yAs/InxGa1−xAS/AlyGa1−yAs single quantum wells
2. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy
3. Valence band engineering in strained-layer structures
4. Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsets
5. Photoluminescence studies of In 0.25 Ga 0.75 As-GaAs strained quantum wells under high pressure
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