Hydrostatic and uniaxial effects in InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

Hydrostatic and uniaxial effects in InGaN/GaN quantum wells

Published:2018-11-28 Issue:20 Volume:124 Page:205701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Trzeciakowski Witold¹^ORCID,Bercha Artem¹^ORCID,Gładysiewicz-Kudrawiec Marta²

Affiliation:

1. Instytut Wysokich Ciśnień PAN, Sokołowska 29/37, 01-142 Warszawa, Poland

2. Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Funder

Narodowe Centrum Nauki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5047467

Reference22 articles.

1. Hydrostatic pressure coefficients of the photoluminescence ofInxGa1−xAs/GaAs strained-layer quantum wells

2. Electronic structure of cadmium-telluride–zinc-telluride strained-layer superlattices under pressure

3. Elastic constants of gallium nitride

4. InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering

5. Inapplicability of Martin transformation to elastic constants of zinc-blende and wurtzite group-III nitride alloys

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