Pressure behavior of the alloy band edge and nitrogen-related centers inGaAs0.999N0.001-Reference-Cited by-同舟云学术

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Pressure behavior of the alloy band edge and nitrogen-related centers inGaAs0.999N0.001

Published:2005-01-26 Issue:4 Volume:71 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Ma B. S.,Su F. H.,Ding K.,Li G. H.,Zhang Y.,Mascarenhas A.,Xin H. P.,Tu C. W.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.71.045213/fulltext

Reference45 articles.

1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

2. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03

3. Band Anticrossing in GaInNAs Alloys

4. Effect of nitrogen on the band structure of GaInNAs alloys

5. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

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1. Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals;Vacuum;2024-11

2. Pressure-induced improvement in symmetry and change in electronic properties of SnSe;Journal of Molecular Modeling;2017-10-23

3. Technological Applications of Hydrogenated Dilute Nitrides and Perspectives;Hydrogenated Dilute Nitride Semiconductors;2015-04-01

4. Pressure dependence of the band gap energy at Г and X for the dilute nitride GaNP alloy;Journal of Alloys and Compounds;2014-09

5. Nitrogen-induced localized level observed by photoreflectance in GaAsN thin films grown by chemical beam epitaxy;Journal of Crystal Growth;2013-12

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