Sb lattice diffusion inSi1−xGex/Si(001)heterostructures: Chemical and stress effects-Reference-Cited by-同舟云学术

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Sb lattice diffusion inSi1−xGex/Si(001)heterostructures: Chemical and stress effects

Published:2004-04-15 Issue:15 Volume:69 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Portavoce A.,Gas P.,Berbezier I.,Ronda A.,Christensen J. S.,Kuznetsov A. Yu.,Svensson B. G.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.69.155415/fulltext

Reference17 articles.

1. Surface segregation mechanism during two‐dimensional epitaxial growth: The case of dopants in Si and GaAs molecular‐beam epitaxy

2. Activation volume for boron diffusion in silicon and implications for strained films

3. Activation volume for antimony diffusion in silicon and implications for strained films

4. Sb-enhanced diffusion in strainedSi1−xGex: Dependence on biaxial compression

5. Diffusion of Sb in relaxed Si1−xGex

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