Activation volume for boron diffusion in silicon and implications for strained films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123123
Reference14 articles.
1. Effects of hydrostatic pressure on dopant diffusion in silicon
2. Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms
3. Nonhydrostatic Stress Effects on Boron Diffusion in SI
4. The interstitial fraction of diffusivity of common dopants in Si
5. Pressure effects on self-diffusion in silicon
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