Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded inSiO2-Reference-Cited by-同舟云学术

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Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded inSiO2

Published:2003-08-29 Issue:8 Volume:68 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Daldosso N.,Luppi M.,Ossicini S.,Degoli E.,Magri R.,Dalba G.,Fornasini P.,Grisenti R.,Rocca F.,Pavesi L.,Boninelli S.,Priolo F.,Spinella C.,Iacona F.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.085327/fulltext

Reference38 articles.

1. Surface control of luminescence in silicon nanoparticles

2. Changes in the Electronic Properties of Si Nanocrystals as a Function of Particle Size

3. Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

4. First-Principles Study of Oxide Growth on Si(100) Surfaces and atSiO2/Si(100) Interfaces

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