Critical Level of Nitrogen Incorporation in Silicon Oxynitride Films: Transition of Structure and Properties, toward Enhanced Anticorrosion Performance-Reference-Cited by-同舟云学术

Critical Level of Nitrogen Incorporation in Silicon Oxynitride Films: Transition of Structure and Properties, toward Enhanced Anticorrosion Performance

Published:2022-04-12 Issue:4 Volume:4 Page:1741-1755
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Topka Konstantina Christina¹²,Diallo Babacar³,Puyo Maxime⁴,Papavasileiou Paris¹,Lebesgue Charlotte⁴,Genevois Cecile³,Tison Yann⁵,Charvillat Cedric¹,Samelor Diane¹,Laloo Raphael⁴,Sadowski Daniel¹,Senocq François¹,Sauvage Thierry³,Vergnes Hugues²,Menu Marie-Joelle⁴,Caussat Brigitte²,Turq Viviane⁴,Pellerin Nadia³,Vahlas Constantin¹^ORCID

Affiliation:

1. CIRIMAT, CNRS-INP-UPS, ENSIACET, Toulouse INP, 4 Allée Emile Monso, BP 44362, Toulouse cedex 4, 31030, France

2. Laboratoire de Génie Chimique (LGC), Université de Toulouse, CNRS, 4 Allée Emile Monso, CS 84234, Toulouse cedex 4, 31432, France

3. CEMHTI, CNRS UPR3079, 1D avenue de la Recherche Scientifique, Orleans, cedex 2, 45071, France

4. CIRIMAT, CNRS-INP-UPS, Université Toulouse 3 - Paul Sabatier, 118 Route de Narbonne, Toulouse cedex 9, 31062, France

5. Université de Pau et des Pays de l’Adour, E2S UPPA, CNRS, IPREM, Pau, France Helioparc Pau - Pyrenees, 2 Avenue du President Angot, Pau Cedex 9, 64053, France

Funder

Agence Nationale de la Recherche

European Regional Development Fund

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00018

Reference70 articles.

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2. A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film

3. Effect of deposition conditions on physical properties of sputtered silicon oxynitride thin films on float glass

4. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

5. CIS module pilot processing applying concurrent rapid selenization and sulfurization of large area thin film precursors

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