Towards Standardization of Hybrid Bonding Interface: In-depth Study of Dielectrics on Direct Bonding-Reference-Cited by-同舟云学术

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Towards Standardization of Hybrid Bonding Interface: In-depth Study of Dielectrics on Direct Bonding

Published:2024-05-28 Issue: Volume:PP Page:599-605
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Yang Yi¹,Brun Xavier F.¹,Weber Marc H.²,Flores Marco³

Affiliation:

1. Intel Corporation,Chandler,Arizona

2. Washington State University,Pullman,Washington

3. Arizona State University,Tempe,Arizona

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10565086.pdf?arnumber=10565086

Reference21 articles.

1. Removal of Adsorbed Water on Si Wafers for Surface Activated Bonding

2. Mechanisms for room temperature direct wafer bonding

3. Reliability Challenges in Advanced 3D Technologies : the Case of Through Silicon Vias and Technologies;Hybrid-bonding;IEEE Trans. Device Mater. Reliab.,2023

4. Surface Energy Characterization for Die-Level Cu Hybrid Bonding

5. Contamination-Free Cu/SiCN Hybrid Bonding Process Development for Sub- μm Pitch Devices with Enhanced Bonding Characteristics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A CMP Process for Hybrid Bonding Application with Conventional / nt-Cu and Si_xN_y / Si_xO_y Dielectrics;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

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