Silicon oxynitride thin films by plasma-enhanced atomic layer deposition using a hydrogen-free metal-organic silicon precursor and N2 plasma

Author:

Yang Hae Lin,Kim Tae-Yeon,Park Gi-Beom,Yoon Ara,Song Ki-cheol,Lee Yeonhee,Park Jongryul,Kang Taehyeong,Park Yongjoo,Park Jin-SeongORCID

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference43 articles.

1. Compositional study of ultrathin rapidly reoxidized nitrided oxides;Hori;J. Appl. Phys.,1989

2. Tunneling leakage current in oxynitride: dependence on oxygen/nitrogen content;Guo;IEEE Electron. Device Lett.,1998

3. CIS module pilot processing applying concurrent rapid selenization and sulfurization of large area thin film precursors;Palm,2003

4. High resolution ion scattering study of silicon oxynitridation;Lu;Appl. Phys. Lett.,1996

5. Boron Diffusion in Silicon Oxides and Oxynitrides;Ellis,1998

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