Electronic and transformation properties of a metastable defect introduced inn-type GaAs by α-particle irradiation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.17521/fulltext
Reference17 articles.
1. Electrical and optical characterization of metastable deep-level defects in GaAs
2. Negatively charged hydrogen species inn-type GaAs
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4. Configurationally multistable defect in silicon
5. MetastableMcenter in InP: Defect-charge-state—controlled structural relaxation
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