Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al0.35Ga0.65As multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1356434
Reference26 articles.
1. Native defects in gallium arsenide
2. Influence of high energy particle radiation on GaAs/AlGaAs quantum well infrared photodetectors
3. Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers
4. Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
5. Quantum well radiation detectors: assessment and perspectives
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Radiation Effects in Quantum Dot Structures;Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics;2008
2. Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing;Applied Physics Letters;2004-12-20
3. Semiconductor Nanostructures for Infrared Applications;Solid State Phenomena;2004-07
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