Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing-Reference-Cited by-同舟云学术

Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing

Published:2004-12-20 Issue:25 Volume:85 Page:6158-6160
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pavelescu E.-M.,Gheorghiu A.,Dumitrescu M.,Tukiainen A.,Jouhti T.,Hakkarainen T.,Kudrawiec R.,Andrzejewski J.,Misiewicz J.,Tkachenko N.,Dhaka V. D. S.,Lemmetyinen H.,Pessa M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1834997

Reference14 articles.

1. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

2. Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy

3. Formation of nonradiative defects in molecular beam epitaxial GaNxAs1−x studied by optically detected magnetic resonance

4. Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

5. (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

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