Nitrogen states in Ga(As,P) and the Koster-Slater model
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.17.924/fulltext
Reference26 articles.
1. Identification of recombination luminescence transitions in N-doped GaAs1−xPx (x = 0.87)
2. Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum
3. Effect of composition and pressure on the nitrogen isoelectronic trap inGaAs1−xPx
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1. Corelike nature of the PdMVVshift in Pd-based alloys;Physical Review B;1992-06-15
2. Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs1−xPx:N;physica status solidi (b);1984-08-01
3. Stress dependence of the nitrogen-bound excitons in GaP: N;Physical Review B;1980-11-15
4. Local-environment effect on the nitrogen bound state inGaPxAs1−xalloys: Experiments and coherent-potential approximation theory;Physical Review B;1980-06-15
5. Nitrogen states in Ga(As,P) and the long-range, short-range model: A systematic study;Physical Review B;1980-04-15
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