Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs1−xPx:N
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Nitrogen isoelectronic trap inGaAs1−xPx: II. Model calculation of the electronic statesNΓandNXat low temperature
2. Nitrogen trap in the semiconductor alloys GaAs1−χxPχx and AlχxGa1−χxAs
3. Theory of bound states induced by disorder and isoelectronic potentials: Ga(As,P):N
4. Nitrogen states in Ga(As,P) and the Koster-Slater model
5. Nitrogen states in Ga(As,P) and the intermediate-range model
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Binding energy of bound excitonsD0Xin quantum wells;Physical Review B;1998-09-15
2. Isoelectronic bound-exciton photoluminescence in strained beryllium-dopedSi0.92Ge0.08epilayers andSi0.92Ge0.08/Si superlattices at ambient and elevated hydrostatic pressure;Physical Review B;1997-03-15
3. Nitrogen bound exciton spectroscopy in GaAs under pressure;Semiconductor Science and Technology;1989-04-01
4. Observation of the NΓ−x line in GaAs0.42P0.58:N;physica status solidi (b);1986-06-01
5. Influence of Local Environment on Bound Excitons and Bound Excitonic Mqlecules in III-V Alloys. II. Numerical Results for GaxIn1−xP:N and the Role of Disorder Topology for the Optical Spectrum;physica status solidi (b);1985-12-01
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