Ordering of amorphous silicon during solid-phase epitaxy studied by scanning tunneling microscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.8020/fulltext
Reference18 articles.
1. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
2. Pressure‐enhanced crystallization kinetics of amorphous Si and Ge: Implications for point‐defect mechanisms
3. Kinetics of solid phase crystallization in amorphous silicon
4. Observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning tunneling microscopy
5. Surface modification ofa‐Si:H with a scanning tunneling microscope operated in air
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