Pressure‐enhanced crystallization kinetics of amorphous Si and Ge: Implications for point‐defect mechanisms
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350243
Reference79 articles.
1. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
2. Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals
3. Kinetics of solid phase crystallization in amorphous silicon
4. Epitaxial growth of amorphous Ge films deposited on single‐crystal Ge
5. Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation
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