Observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108598
Reference10 articles.
1. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
2. Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques
3. Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2patterns
4. Growth Conditions of Deposited Si Films in Solid Phase Epitaxy
5. Epitaxial growth of Si deposited on (100) Si
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