Formation and decomposition of Si hydrides during adsorption ofSi2H6ontoSi(100)(2×1)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.65.075319/fulltext
Reference23 articles.
1. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
2. Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron doping
3. Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening
4. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
5. H2-TPD study on the difference in the growth kinetics between SiH4- and Si2H6-GSMBE
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